1 / f noise in conducting channels of topological insulator materials
نویسندگان
چکیده
1 Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521, USA 2 Department of Electrical, Computer and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA 3 Ioffe Institute, Russian Academy of Sciences, St. Petersburg 194021, Russia
منابع مشابه
The Department of Electrical Engineering
Materials with Dirac-type electronic band structure have recently drawn much interest. These materials revealed unique electrical, thermal and optical properties, which can be potentially used in future highspeed electronics. In this dissertation research, I investigate on two different classes of Dirac materials: graphene and topological insulators of the bismuth telluride (Bi2Te3) family. The...
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